(646g) The Role of Dative Bonding in the Reactivity of Semiconductor and Metal Oxide Surfaces

We have investigated the reactions of various organic and inorganic molecules on semiconductor and metal oxide surfaces and have identified dative bonding between Lewis acids and bases as a key process for many surface reactions. These Lewis acid-base complexes mediate various surface reaction mechanisms and lead to trapped intermediates which play a signficant role in the reaction kinetics of many processes. The author will provide various examples including self-assembling adsorption, reactions of amino acids on semiconductors and reaction of organo metalics on metal oxide surfaces.