Investigation of Low-k Sico Plasma Deposition

This proposed research project seeks to explore the fundamental mechanisms that govern lateral growth during the atomic surface deposition of SiCO on patterned Si/SiO₂ wafers and the influence of different synthesis strategies on achieving precise control over lateral growth. The ultimate goal is to enhance control over lateral growth, thus mitigating device failures, aligning with Seismic Shift #5 in the Decadal Plan for Semiconductors released by Semiconductor Research Corporation. This shift underscores the need for addressing the increasing energy demands of computing relative to global energy production and highlights the potential for new computing paradigms with improved energy efficiency.

The investigation involves an array of area-selective deposition (ASD) reactions, each exhibiting distinct growth and feature shape development patterns. While ASD has recently emerged as a crucial augmentation to traditional lithographic patterning techniques, uncontrolled lateral growth during ASD has been identified as a primary factor leading to decreased device performance and eventual failures. To tackle this issue, it is imperative to gain a comprehensive understanding of the growth mechanisms and develop effective models for controlling lateral overgrowth.

Previous research conducted in the context of dual-tone ASD for the conjugated polymer poly(3,4-ethylenedioxythiophene (PEDOT) has yielded promising results. Through various chemical surface treatments, researchers successfully modified the selectivity of PEDOT ASD on Si/SiO₂ surfaces, ultimately identifying process parameters that led to tone inversion of a previously investigated selectivity configuration. This enhanced control over the surface selectivity increased the versatility of PEDOT ASD for selective surface passivation procedures during device fabrication. Furthermore, the ability to deposit PEDOT in two opposite selectivity configurations generated new insight for the effect of surface bond termination on the extent and shape of lateral film growth. Building upon these encouraging findings, the current project aims to extend the investigation to the ASD of a more industrially relevant low-k dielectric material, SiCO, with the objective of achieving selective deposition and comprehensive characterization.

The outcomes of this research are anticipated to contribute significantly to the development of strategies for controlling lateral growth during SiCO atomic surface deposition, with broad implications for the semiconductor industry and advancements in energy-efficient computing technologies.