2021 Annual Meeting
(299e) High-Throughput Computational Analysis of the Role of Finite Temperature in the Optical Response of 2D Materials
Authors
DFT is the standard modeling methodology for studying the electronic properties of solid-state materials. However, the common T = 0K approximation may result in an erroneous understanding of the material properties [5]. This is especially the case for low-dimensional materials with low-screening that results in increased electron-phonon interactions [6]. We present a high-throughput DFT and beyond-DFT approach to study of the effect of finite temperature on the optical properties of 2D materials, incorporating the role of phonons through a semi-classical approach [7]. We show that the strength of electron-phonon interactions is highly dependent on the bond ionicity within the crystal. We show that this framework allows for a systematic theoretical exploration of new materials for solar energy conversion.
[1] Q. Ma, G. Ren, K. Xu, and J. Z. Ou, âTunable Optical Properties of 2D Materials and Their Applications,â Advanced Optical Materials, vol. 9, no. 2, p. 2001313, 2021, doi: https://doi.org/10.1002/adom.202001313.
[2] M. Javaid, D. W. Drumm, S. P. Russo, and A. D. Greentree, âSurface-gate-defined single-electron transistor in a MoS 2 bilayer,â Nanotechnology, vol. 28, no. 12, p. 125203, Mar. 2017, doi: 10.1088/1361-6528/aa5ce0.
[3] A. Pospischil, M. M. Furchi, and T. Mueller, âSolar-energy conversion and light emission in an atomic monolayer pân diode,â Nature Nanotech, vol. 9, no. 4, pp. 257â261, Apr. 2014, doi: 10.1038/nnano.2014.14.
[4] B. Zhang et al., âRecent Progress in 2D MaterialâBased Saturable Absorbers for All SolidâState Pulsed Bulk Lasers,â Laser & Photonics Reviews, vol. 14, no. 2, p. 1900240, Feb. 2020, doi: 10.1002/lpor.201900240.
[5] M. Zacharias, C. E. Patrick, and F. Giustino, âStochastic Approach to Phonon-Assisted Optical Absorption,â Phys. Rev. Lett., vol. 115, no. 17, p. 177401, Oct. 2015, doi: 10.1103/PhysRevLett.115.177401.
[6] T. Sohier et al., âEnhanced Electron-Phonon Interaction in Multivalley Materials,â Phys. Rev. X, vol. 9, no. 3, p. 031019, Aug. 2019, doi: 10.1103/PhysRevX.9.031019.
[7] M. Zacharias and F. Giustino, âTheory of the special displacement method for electronic structure calculations at finite temperature,â Phys. Rev. Research, vol. 2, no. 1, p. 013357, Mar. 2020, doi: 10.1103/PhysRevResearch.2.013357.