2019 AIChE Annual Meeting

Session: Wide Bandgap Materials for Electronic and Photonic Applications

This session will focus on the fabrication and application of wide bandgap materials for electronic and photonic applications. Submissions dealing with the the synthesis, characterization, simulation, and application of these materials are welcome.

Chair

Kevin McPeak, Louisiana State University

Co-Chair

Jiancheng Yang, University of Florida

Presentations

12:30 PM

(556a) Investigation of Process Techniques for Ga2O3 Based Diodes
Fan Ren, Jiancheng Yang, Patrick Carey, Chaker Fares, Minghan Xian, Stephen Pearton, Marko Tadjer

01:00 PM

(556b) Radiation Damage E?ects in Ga2O3 Materials and Devices
Fan Ren, Chaker Fares, Jiancheng Yang, Patrick Carey, Minghan Xian, Stephen Pearton, Jihyun Kim, Alexander Polyakov

01:30 PM

(556c) Radiation and Electron-Injection Induced Effects in Ga2O3 Schottky Rectifiers
Sushrut Modak, Leonid Chernyak, Jiancheng Yang, Fan Ren, Stephen Pearton

01:55 PM

(556d) 30 a Forward Current with 240 V Reverse Breakdown Ga2O3 Field-Plated Schottky Rectifiers
Fan Ren, Minghan Xian, Jiancheng Yang, Chaker Fares, Patrick Carey, Jessica Partain, Marko Tadjer, Stephen Pearton, Akito Kuramata

02:35 PM

(556f) High Dielectric Semiconductor Nanostructures with Tunable Mie Resonance in the Visible to Near-IR Region
Farshid Mohammadparast, Sundaram Bhardwaj Ramakrishnan, Ravi Teja Addanki Tirumala, Marimuthu Andiappan