2019 AIChE Annual Meeting
(388d) Reversible Tuning of the Optoelectronic Properties of Transition Metal Doped Semiconductor Materials for Adaptive Luminescence
Authors
Ni doped TiO2 thin films, synthesized via sol-gel chemistry, were characterized to identify effect of surface dipoles (para-substituted benzoic acid ligands) on their optoelectronic and structural properties. The local structural and electronic changes around Ni2+ with the ligand were investigated via soft x-ray absorption spectroscopy (XAS) and in situ ultraviolet photoelectron spectroscopy (UPS), respectively. Upon functionalization with an electron withdrawing ligand, a distinct shift in the t2g:eg filling and energy levels were observed in the Ni LII edge XAS spectra and was attributed to a local geometry distortion with a change in the electron density based on DFT simulations. Additionally, the direction of the valence band bending and valence band electronic structure of the TiO2:Ni2+ thin films was characterized with UPS. The bending was observed to be a function of the surface dipole and coverage, and the original state could be recovered due to the weak chemisorption of the benzoic-acid ligand molecules on the surface of the TiO2:Ni2+. Finally, a core-shell structure was synthesized to facilitate energy transfer between the Ni and RE dopants for enhanced upconversion luminescence. Er3+ doped NaYF4 nanoparticles were synthesized as the core NPs using colloidal chemistry and Ni2+ doped shell layer was coated to have ligand dependent absorption. The ligand-induced shifts in the optical absorption (~ 50 nm) and the emission spectra of these surface-modified core-shell phosphors were determined by UV-Vis and photoluminescence (PL) measurements. Additionally, the excited state energy transfer kinetics between the Er-Ni ion couple were extracted from the lifetime decay measurements. Ultimately, these adaptive luminescent phosphors have the potential to reduce the RE dependence in light-emitting diodes, anti-counterfeit technologies, bio-detection, etc.