2008 Annual Meeting

Session: Transport Phenomena In Electronic Materials Processing

Transport Phenomena in Electronic Materials Processing

Chair

W. Robert Ashurst, Auburn University

Co-Chair

Jeffrey J. Derby, University of Minnesota

Presentations

03:15 PM

(566a) Explanation for Benefits of Millisecond Annealing In Ultrashallow Junction Formation
Edmund G. Seebauer, Charlotte T. M. Kwok

03:35 PM

(566b) The Combined Role of Transport Phenomena and Interfacial Attachment Kinetics during Liquid Phase Epitaxy of Mercury Cadmium Telluride
Igal G. Rasin, Anne Ben Dov, Ilana Grimberg, Olga Klin, Eliezer Weiss, Simon Brandon

03:55 PM

(566c) First Principles Determination of Highly Mobile Dopant-Interstitial Complexes and Their Relative Contribution to Dopant Diffusion In Silicon
Kyoung Kweon, Gyeong S. Hwang

04:15 PM

(566d) Computational Insights into the (Complex) Aggregation Physics of Self-Interstitials
Sumeet Kapur, Talid Sinno

04:35 PM

(566e) A Comprehensive Model for Coupled Oxide Precipitation and Point Defect Aggregation In Crystalline Silicon
Rubal Dua, Talid Sinno

04:55 PM

(566f) Optically Stimulated Diffusion In Ultrashallow Junction Formation
Prashun Gorai, Charlotte Kwok, Edmund G. Seebauer

05:15 PM

(566g) Morphological Stability Analysis of Planar Crystalline Solid Surfaces Under the Simultaneous Action of Electric Fields and Mechanical Stresses
Vivek Tomar, M. Rauf Gungor, Dimitrios Maroudas