2008 Annual Meeting

Session: Transport Phenomena In Electronic Materials Processing

Transport Phenomena in Electronic Materials Processing

Chair

Ashurst, W. R., Auburn University

Co-Chair

Derby, J. J., University of Minnesota

Presentations

03:15 PM

(566a) Explanation for Benefits of Millisecond Annealing In Ultrashallow Junction Formation

03:35 PM

(566b) The Combined Role of Transport Phenomena and Interfacial Attachment Kinetics during Liquid Phase Epitaxy of Mercury Cadmium Telluride

03:55 PM

(566c) First Principles Determination of Highly Mobile Dopant-Interstitial Complexes and Their Relative Contribution to Dopant Diffusion In Silicon

04:15 PM

(566d) Computational Insights into the (Complex) Aggregation Physics of Self-Interstitials

04:35 PM

(566e) A Comprehensive Model for Coupled Oxide Precipitation and Point Defect Aggregation In Crystalline Silicon

04:55 PM

(566f) Optically Stimulated Diffusion In Ultrashallow Junction Formation

05:15 PM

(566g) Morphological Stability Analysis of Planar Crystalline Solid Surfaces Under the Simultaneous Action of Electric Fields and Mechanical Stresses