(682f) Single Crystal Insb Nanowires: Synthesis, Characterization, Properties and Applications

One-dimensional III-V compound semiconductor nanowires are an important class of nanomaterials that possess unique structures, remarkable properties, and great potential in various applications. Ultra small sensors, detectors, power sources, cooling devices, communication, and navigation systems with very low mass, volume, and power consumption are possible with this class of new nanomaterials. While there are a number of reports in literature on large band-gap III-V semiconductor nanowires (i.e., GaAs, GaN, InP, InAs nanowires), studies on small band-gap III-V nanowires are very rare. InSb represents the smallest band-gap III-V compound semiconductor, and has its own unique physical properties. We report here the first large-scale synthesis of single crystal InSb nanowires using vapor-liquid-solid (VLS) transport process. Through the investigation of various growth conditions, we have identified a very narrow growth window for producing single crystal InSb nanowires repetitively and in large scales. Our batch grown InSb nanowires are 50-180 nm in diameter and 10-30 micron in length. Materials composition and structural analysis of InSb nanowires reveal that these are high quality single crystal InSb. The native oxide layer along the nanowires is only 3 nm thick. The nanowire growth direction is found to be 45 degrees toward the lattice plane in a cubic structure. We are currently investigating this type of single crystal InSb nanowires for their potential applications as thermoelectric nanomaterials in energy efficient solid-state refrigeration and power generation applications.