2006 AIChE Annual Meeting
(242b) Atomistic Simulation of the Formation of Nanoporous Silica Films Via Chemical Vapor Deposition
Authors
In this work, we investigate the creation of moderate density silica films via direct simulation of the CVD process at intermediate to high temperatures. To model the creation of nanoporous silica layers via CVD we apply a hybrid kinetic Monte-Carlo (KMC) method [4]. Lattice KMC [5] is used for the elementary reactions and an off-lattice method [6,7] is employed for silica network relaxation and bond switching moves. The sensitivity of the resulting layer structure (nanoporosity, cavity size distribution, bond angle distributions, ring size distributions) to the substrate temperature, composition of the vapour, and the initial distribution of substrate seed sites is examined. The outcome of this work will assist in providing guidelines for the protocols needed to fabricate high temperature permselective membranes for the separation of CO2 from combustion gas mixtures.
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