2005 Annual Meeting

Session: Nanoelectronic Materials

Chair

Brett A. Cruden, NASA Ames Center for Nanotechnology

Presentations

12:30 PM

(512a) Atomic-Scale Analysis of Ductile Void Growth and Nanocrystalline Domain Formation as Strain Relaxation Mechanisms in Ultra-Thin Metallic Films
M. Rauf Gungor, Dimitrios Maroudas

12:48 PM

(512b) Formation of Epitaxial Ge Nanorings on Si by Self-Assembled Sio2 Particles and Touchdown of Ge through a Thin Layer of Sio2
Qiming Li, Sang M. Han

01:06 PM

(512c) Hydrogen-Induced Crystallization of Silicon at Room Temperature
Radhika C. Mani, Eray S. Aydil

01:24 PM

(512d) Nanocharacterization of Relaxation Properties in Organic Thin Film Electronic Materials
Tomoko Gray

01:42 PM

(512e) Design Organic Self-Assembly Monolayers (Sams) on Silicon Surface as Low K and High K Dielectric Materials Applied in Nanoelectronics
Weiqiao Deng, William A. Goddard, Qingsong Zhang

02:00 PM

(512f) The Effects of Contact Structures on the Electron Transport Characteristics of Au-Si Interfaces
Liuming Yan, Jorge M. Seminario

02:18 PM

(512g) Ab Initio Based Current-Voltage Characteristics for Stilbene Substituted Octasilsesquioxanes Attached to Au(111) Electrodes
Neeti Kapur, Cheng-Ying Lee, Matthew Neurock

02:36 PM

(512h) Nanocell: the Possible Solution for Moore's Law
Yuefei Ma, Liuming Yan, Jorge M. Seminario